Fermi Surface Manipulation by External Magnetic Field Demonstrated for a Prototypical Ferromagnet

被引:26
|
作者
Mlynczak, E. [1 ,2 ,3 ]
Eschbach, M. [1 ,2 ]
Borek, S. [4 ]
Minar, J. [4 ,5 ]
Braun, J. [4 ]
Aguilera, I. [1 ,2 ]
Bihlmayer, G. [1 ,2 ]
Doering, S. [1 ,2 ]
Gehlmann, M. [1 ,2 ]
Gospodaric, P. [1 ,2 ]
Suga, S. [1 ,2 ,6 ]
Plucinski, L. [1 ,2 ]
Bluegel, S. [1 ,2 ]
Ebert, H. [4 ]
Schneider, C. M. [1 ,2 ]
机构
[1] Forschungszentrum Julich, PGI, D-52425 Julich, Germany
[2] JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany
[3] AGH Univ Sci & Technol, Fac Phys & Appl Comp Sci, Al Mickiewicza 30, PL-30059 Krakow, Poland
[4] Ludwig Maximilians Univ Munchen, Dept Chem, Butenandtstr 5-13, D-81377 Munich, Germany
[5] Univ West Bohemia, New Technol Res Ctr, Univ 8, Plzen 30614, Czech Republic
[6] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
来源
PHYSICAL REVIEW X | 2016年 / 6卷 / 04期
关键词
MAGNETOCRYSTALLINE ANISOTROPY; STATES; PHOTOEMISSION; FE(100); IRON; BAND; APPROXIMATION; SPECTROSCOPY; DEGENERACY; ELECTRONS;
D O I
10.1103/PhysRevX.6.041048
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high-resolution angle-resolved photoemission spectroscopy, we demonstrate openings of the spin-orbit-induced electronic band gaps near the Fermi level. The band gaps, and thus the Fermi surface, can be manipulated by changing the remanent magnetization direction. The effect is of the order of. Delta E = 100 meV and Delta k = 0.1 angstrom(-1). We show that the observed dispersions are dominated by the bulk band structure. First-principles calculations and one-step photoemission calculations suggest that the effect is related to changes in the electronic ground state and not caused by the photoemission process itself. The symmetry of the effect indicates that the observed electronic bulk states are influenced by the presence of the surface, which might be understood as related to a Rashba-type effect. By pinpointing the regions in the electronic band structure where the switchable band gaps occur, we demonstrate the significance of spinorbit interaction even for elements as light as 3d ferromagnets. These results set a new paradigm for the investigations of spin-orbit effects in the spintronic materials. The same methodology could be used in the bottom-up design of the devices based on the switching of spin-orbit gaps such as electric-field control of magnetic anisotropy or tunneling anisotropic magnetoresistance.
引用
收藏
页数:13
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