Effect of low-energy N2+ ion beam bombardment on silicate glass thin films studied by x-ray photoelectron spectroscopy

被引：0
|
作者：
García, M [1 ]
Montero, I
Ripalda, JM
Galán, L
机构：
[1] Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
[2] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 06期
关键词：
D O I：
10.1063/1.1450027
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin film borophosphosilicate glasses, SiOxByPz, have been obtained by chemical vapor deposition on (100) Si substrates. The interaction of low-energy N-2(+) ions with these films has been studied by x-ray photoelectron spectroscopy (XPS) and infrared spectroscopy. Determination of the chemical composition of the borophosphosilicate glasses was done by qualitative and quantitative XPS analysis. The differences in composition between the films before and after the bombardment have been explained in terms of the relative thermodynamic stability of the compounds present in the sample. (C) 2002 American Institute of Physics.
引用
收藏
页码：3626 / 3631
页数：6
相关论文
共 50 条
  • [21] In situ analysis of Si(100) surface damage induced by low-energy rare-gas ion bombardment using x-ray photoelectron spectroscopy
    Ishii, M
    Hirose, Y
    Sato, T
    Ohwaki, T
    Taga, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03): : 820 - 824
  • [22] Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy
    Calka, P.
    Martinez, E.
    Lafond, D.
    Minoret, S.
    Tirano, S.
    Detlefs, B.
    Roy, J.
    Zegenhagen, J.
    Guedj, C.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
  • [23] Electronic properties of Co2MnSi thin films studied by hard x-ray photoelectron spectroscopy
    Ouardi, Siham
    Gloskovskii, Andrei
    Balke, Benjamin
    Jenkins, Catherine A.
    Barth, Joachim
    Fecher, Gerhard H.
    Felser, Claudia
    Gorgoi, Mihaela
    Mertin, Marcel
    Schaefers, Franz
    Ikenaga, Eiji
    Yang, Ke
    Kobayashi, Keisuke
    Kubota, Takahide
    Oogane, Mikihiko
    Ando, Yasuo
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (08)
  • [24] Hydrogenation of CO2 on NiGa thin films studied by ambient pressure x-ray photoelectron spectroscopy
    Lin, Pei-Shun
    Chang, Sun-Tang
    Chen, Sheng-Yuan
    Luh, Dah-An
    Wang, Chia-Hsin
    Yang, Yaw-Wen
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (42)
  • [25] Probing ultrathin film continuity and interface abruptness with x-ray photoelectron spectroscopy and low-energy ion scattering
    Zhang, Wenyu
    Nahm, Rambert K.
    Ma, Paul F.
    Engstrom, James R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (06):
  • [26] X-RAY PHOTOELECTRON-SPECTROSCOPY OF SILICON OXYNITRIDE LAYERS OBTAINED BY LOW-ENERGY ION-IMPLANTATION
    BENKHEROUROU, O
    DEVILLE, JP
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 46 (02): : 87 - 90
  • [27] Formation of thin silicon nitride layers on Si by low energy N2+ ion bombardment
    Bachurin, VI
    Churilov, AB
    Potapov, EV
    Smirnov, VK
    Makarov, VV
    Danilin, AB
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4): : 316 - 319
  • [28] X-ray photoelectron spectroscopy study of CuFeSe2 thin films
    Bernede, JC
    Hamdadou, N
    Khelil, A
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2004, 141 (01) : 61 - 66
  • [29] ATTENUATION OF LOW-ENERGY ELECTRONS BY SOLIDS - RESULTS FROM X-RAY PHOTOELECTRON SPECTROSCOPY
    STEINHARDT, RG
    HUDIS, J
    PERLMAN, ML
    PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (03): : 1016 - +
  • [30] Degradation pattern of thin HfO2 films on Si(100) under ultrahigh-vacuum annealing: An investigation by x-ray photoelectron spectroscopy and low-energy ion scattering
    Zenkevich A.V.
    Lebedinskii Y.Y.
    Barantsev N.S.
    Nevolin V.N.
    Kulikauskas V.S.
    Scarel G.
    Fanciulli M.
    Russ. Microelectr., 2006, 4 (210-215): : 210 - 215
12345