Effect of low-energy N2+ ion beam bombardment on silicate glass thin films studied by x-ray photoelectron spectroscopy

被引：0

作者：

García, M ^{[1
]}

Montero, I

Ripalda, JM

Galán, L

机构：

[1] Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain

[2] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 06期

关键词：

D O I：

10.1063/1.1450027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film borophosphosilicate glasses, SiOxByPz, have been obtained by chemical vapor deposition on (100) Si substrates. The interaction of low-energy N-2(+) ions with these films has been studied by x-ray photoelectron spectroscopy (XPS) and infrared spectroscopy. Determination of the chemical composition of the borophosphosilicate glasses was done by qualitative and quantitative XPS analysis. The differences in composition between the films before and after the bombardment have been explained in terms of the relative thermodynamic stability of the compounds present in the sample. (C) 2002 American Institute of Physics.

引用

页码：3626 / 3631

页数：6

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