Electrical Characteristics and Microstructures of Dy-doped Bi4Ti3O12 Ceramics

被引：1
|
作者：
Mei, X. A. [1 ]
Chen, M. [1 ]
Liu, R. F. [1 ]
Sun, Y. H. [1 ]
Liu, J. [1 ]
机构：
[1] Hunan Inst Sci & Technol, Sch Phys, Yueyang 414000, Peoples R China
来源：
CHINESE CERAMICS COMMUNICATIONS II | 2012年 / 412卷
关键词：
Microstructure; Impedance; Electrical Properties; Bismuth Titanate; CURRENT VOLTAGE CHARACTERISTICS; ELECTROFORMED MIM STRUCTURES; THIN-FILMS; BISMUTH TITANATE; FERROELECTRIC PROPERTIES; SOLUTION DEPOSITION; FILAMENTARY RADII; MEMORIES;
D O I：
10.4028/www.scientific.net/AMR.412.322
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of Dy-bismuth titanate (Bi4-xDyxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Dy-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Dy-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Dy-doped sample exhibit randomly oriented and plate-like morphology.
引用
收藏
页码：322 / 325
页数：4
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