Electrical Characteristics and Microstructures of Dy-doped Bi4Ti3O12 Ceramics

被引：1
|
作者：
Mei, X. A. [1 ]
Chen, M. [1 ]
Liu, R. F. [1 ]
Sun, Y. H. [1 ]
Liu, J. [1 ]
机构：
[1] Hunan Inst Sci & Technol, Sch Phys, Yueyang 414000, Peoples R China
来源：
CHINESE CERAMICS COMMUNICATIONS II | 2012年 / 412卷
关键词：
Microstructure; Impedance; Electrical Properties; Bismuth Titanate; CURRENT VOLTAGE CHARACTERISTICS; ELECTROFORMED MIM STRUCTURES; THIN-FILMS; BISMUTH TITANATE; FERROELECTRIC PROPERTIES; SOLUTION DEPOSITION; FILAMENTARY RADII; MEMORIES;
D O I：
10.4028/www.scientific.net/AMR.412.322
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of Dy-bismuth titanate (Bi4-xDyxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Dy-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Dy-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Dy-doped sample exhibit randomly oriented and plate-like morphology.
引用
收藏
页码：322 / 325
页数：4
相关论文
共 50 条
  • [1] Electrical characteristics and microstructures of (Gd,Dy)-doped Bi4Ti3O12 ceramics
    Cai, Y. H.
    Mei, X. A.
    Chen, M.
    Su, K. L.
    An, W. K.
    Liu, J.
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 88 - 90
  • [2] Electrical Characteristics and Microstructures of Gd-doped Bi4Ti3O12 Ceramics
    Liu, J.
    Chen, M.
    Mei, X. A.
    Sun, Y. H.
    Huang, C. Q.
    CHINESE CERAMICS COMMUNICATIONS II, 2012, 412 : 314 - +
  • [3] Electrical characteristics and microstructures of Gd-doped Bi4Ti3O12 ceramics
    Liu, X. B.
    Sun, Y. H.
    Chen, M.
    Huang, C. Q.
    Liu, J.
    Wan, Z. M.
    HIGH-PERFORMANCE CERAMICS IV, PTS 1-3, 2007, 336-338 : 149 - +
  • [4] Electrical Characteristics and Microstructures of Ce2O3-doped Bi4Ti3O12 Ceramics
    Chen, M.
    Mei, X. A.
    Cai, A. H.
    Liu, J.
    Huang, C. Q.
    CHINESE CERAMICS COMMUNICATIONS II, 2012, 412 : 298 - 301
  • [5] Electrical characteristics and microstructures of Sm2O3-doped Bi4Ti3O12 ceramics
    Chen, M
    Wang, Y
    Liu, ZL
    Dong, L
    Yang, XS
    Yao, KL
    CHINESE PHYSICS LETTERS, 2004, 21 (09) : 1811 - 1814
  • [6] Electrical Characteristics and Microstructures of Pr6O11-doped Bi4Ti3O12 Ceramics
    Chen, M.
    Mei, X. A.
    Liu, R. F.
    Huang, C. Q.
    Liu, J.
    HIGH-PERFORMANCE CERAMICS VII, PTS 1 AND 2, 2012, 512-515 : 1313 - 1316
  • [7] Electrical characteristics and microstructures of Ce-doped Bi4Ti3O12 films
    Chen, S.
    Cai, A. H.
    Mei, X. A.
    Huang, C. Q.
    An, W. K.
    Chen, M.
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 91 - 94
  • [8] Electrical Properties and Microstructures of Tb4O7-doped Bi4Ti3O12 Ceramics
    Mei, X. A.
    Chen, M.
    Liu, R. F.
    Huang, C. Q.
    Liu, J.
    HIGH-PERFORMANCE CERAMICS VII, PTS 1 AND 2, 2012, 512-515 : 1329 - 1332
  • [9] Ferroelectric properties and microstructures of Sm-doped Bi4Ti3O12 ceramics
    Chen, M
    Liu, ZL
    Wang, Y
    Wang, CC
    Yang, XS
    Yao, KL
    PHYSICA B-CONDENSED MATTER, 2004, 352 (1-4) : 61 - 65
  • [10] Electrical Characteristics and Microstructures of Eu2O3-doped Bi4Ti3O12 Thin Films
    Chen, M.
    Mei, X. A.
    Cai, A. H.
    Liu, J.
    Huang, C. Q.
    CHINESE CERAMICS COMMUNICATIONS II, 2012, 412 : 294 - 297
12345