Band Alignment at the Al2O3/β-Ga2O3Interface with CHF3Treatment*

被引：0
|
作者：
Liu, Hao [1 ]
Liu, Wen-Jun [1 ]
Xiao, Yi-Fan [1 ]
Liu, Chao-Chao [1 ]
Wu, Xiao-Han [1 ]
Ding, Shi-Jin [1 ]
机构：
[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2020年 / 37卷 / 07期
基金：
中国国家自然科学基金;
关键词：
73; 20; At; 22; -f; 40; Qv; 71; 15; -m; OXIDE;
D O I：
10.1088/0256-307X/37/7/077302
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The energy band alignment at the atomic layer deposited Al2O3/beta-Ga(2)O(3)interface with CHF(3)treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS). With additional CHF(3)plasma treatment, the conduction band offset increases from 1.95 +/- 0.1 eV to 2.32 +/- 0.1 eV; and the valence band offset decreases from 0.21 +/- 0.1 eV to -0.16 +/- 0.1 eV. As a result, the energy band alignment changes from type I to type II. This energy band alignment transition could be attributed to the downshift of the core-level of Ga 3d, resulting from the Ga-F bond formation in the F-rich interfacial layer, which is confirmed by the SIMS results.
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页数：4
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