Low power and low noise p-HEMT Ku band VCO

被引：6

作者：

Manan, V ^{[1
]}

Long, SL ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 03期

关键词：

figure of merit (FOM); high electron mobility transistor (HEMT); phase noise; voltage-controlled oscillator (VCO);

D O I：

10.1109/LMWC.2006.869856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report a differential 12-GHz voltage-controlled oscillator (VCO) implemented using a commercial GaAs pseudomorphic high electron mobility transistor (p-HEMT) process. The VCO can operate with 3 mW of de power. The single-side-band phase noise at 1-MHz offset from the carrier is -116 dBc and is achieved with 15 mW of dc power consumption. This VCO has a figure of merit of -190.5 dBc which is the best that has been reported for a p-HEMT VCO in the authors' knowledge.

引用

页码：131 / 133

页数：3

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