Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection

被引：0
|
作者：
Geum, Dae-Myeong [1 ,2 ]
Kim, SangHyeon [3 ]
Kim, SeongKwang [2 ]
Kang, SooSeok [2 ]
Kylun, JiHoon [4 ]
Song, Jindong [2 ]
Choi, Won Jun [2 ]
Yoon, Euijoon [1 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul, South Korea
[2] Korea Inst Sci & Technol KIST, Seoul, South Korea
[3] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon, South Korea
[4] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul, South Korea
来源：
2019 SYMPOSIUM ON VLSI TECHNOLOGY | 2019年
基金：
新加坡国家研究基金会;
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate future high-resolution multicolor PDs. At the same time, it covered broad wavelength range from visible to IR.
引用
收藏
页码：T248 / T249
页数：2
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