Quantum Computer Development with Single Ion Implantation

被引：19
|
作者：
Persaud, A. [1 ]
Park, S. J. [1 ]
Liddle, J. A. [1 ]
Rangelow, I. W. [2 ]
Bokor, J. [1 ,3 ]
Keller, R. [1 ]
Allen, F. I. [1 ]
Schneider, D. H. [4 ]
Schenkel, T. [1 ]
机构：
[1] EO Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
[2] Univ Kassel, Inst Microstruct Technol & Analyt, D-34109 Kassel, Germany
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[4] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源：
QUANTUM INFORMATION PROCESSING | 2004年 / 3卷 / 1-5期
关键词：
Electron emission; single electron devices; Coulomb blockade; ion doping; scanning probe; quantum computation;
D O I：
10.1007/s11128-004-3879-1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon. Formation of devices with a few qubits is crucial for validation of basic ideas and development of a scalable architecture. We describe our development of a single ion implantation technique for placement of single atoms into device structures. Collimated highly charged ion beams are aligned with a scanning probe microscope. Enhanced secondary electron emission due to high ion charge states (e. g., P-31(13+), or Te-126(33+)) allows efficient detection of single ion impacts. Studies of electrical activation of low dose, low energy implants of P-31 in silicon show a drastic effect of dopant segregation to the SiO2/Si interface, while Si3N4/Si retards P-31 segregation. We discuss resolution limiting factors in ion placement, and process challenges for integration of single atom arrays with control gates and single electron transistors.
引用
收藏
页码：233 / 245
页数：13
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