Inverse modeling of oxid deposition using measurements of a TEOS CVD process

被引：0

作者：

Sheikholeslami, A ^{[1
]}

Holzer, S ^{[1
]}

Heitzinger, C ^{[1
]}

Leicht, M ^{[1
]}

Fugger, J ^{[1
]}

Grasser, T ^{[1
]}

Selberherr, S ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

来源：

2005 PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The goal of this paper is to identify simulation models for the deposition of silicon dioxide layers from TEOS (Tetraethoxysilane) in a CVD (Chemical Vapor Deposition) process and to calibrate the parameters of these models by comparing simulation results to SEM (Scanning Electron Microscope) images of deposited layers in trenches with different aspect ratios. We describe the three models used and the parameters which lead to the best results for each model which allows us to draw conclusions on the usefulness of the models.

引用

页码：279 / 282

页数：4

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