Inverse modeling of oxid deposition using measurements of a TEOS CVD process

The goal of this paper is to identify simulation models for the deposition of silicon dioxide layers from TEOS (Tetraethoxysilane) in a CVD (Chemical Vapor Deposition) process and to calibrate the parameters of these models by comparing simulation results to SEM (Scanning Electron Microscope) images of deposited layers in trenches with different aspect ratios. We describe the three models used and the parameters which lead to the best results for each model which allows us to draw conclusions on the usefulness of the models.