Raman scattering of InAs quantum dots on GaAs/InP

被引：0
|
作者：
Wang, XQ [1 ]
Li, ZF [1 ]
Du, GT [1 ]
Li, XJ [1 ]
Lu, W [1 ]
Yang, SR [1 ]
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Dept Elect Engn, Changchun 130023, Peoples R China
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InAs quantum dots were doposited on InP substrate and GaAs/InP by LP-MOVPE. Raman scattering was used to analyze strain which plays an important role in formation of InAs quantum dots. We found that both LO and TO frequency of InAs quantum dots shifted to high frequency comparing to its bulk. Raman spectra showed that stain become higher in InAs quantum dots after we inserted a thin GaAs layer between InAs and InP substrate. Canculated results concide with experiments well. We also found LO frequency of InAsP layer.
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页码：1287 / 1288
页数：2
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