Triangular Ferroelectric Domains of Highly (111)-oriented NaNbO3 Thin Film on a Glass Substrate

被引：10
|
作者：
Kim, Woo-Hee [1 ]
Son, Jong Yeog [2 ]
机构：
[1] Samsung Elect, Syst LSI Div, Proc Dev Team, Gyeonggi Do 446711, South Korea
[2] Kyung Hee Univ, Coll Appl Sci, Dept Appl Phys, Gyeonggi Do 446701, South Korea
来源：
ELECTRONIC MATERIALS LETTERS | 2014年 / 10卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
NaNbO3 thin film; pulsed laser deposition; ferroelectric polarization; ferroelectric domain wall energy; piezoelectric force microscopy; FATIGUE;
D O I：
10.1007/s13391-013-3120-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly (111)-oriented polycrystalline NaNbO3 (NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer layers were employed between Pt bottom electrodes and glass substrates. The NNO thin film exhibited good ferroelectricity with high remanent polarization (2P(r) approximate to 46 mu C/cm(2)) and leakage current density (similar to 2 x 10(-6) A/ cm(2) at 500 kV/cm). Based on a piezoelectric force microscope study, it is demonstrated that the NNO thin film with triangular grains has ferroelectric domain wall energy slightly less than PbTiO3 thin films
引用
收藏
页码：107 / 110
页数：4
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