High-frequency properties of an abrupt heterojunction diode

被引：0
|
作者：
Horák, M [1 ]
机构：
[1] Brno Univ Technol, Fac Elect Engn Comp Sci, Dept Microelect, CZ-60200 Brno, Czech Republic
来源：
EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2001年
关键词：
D O I：
10.1109/EDMO.2001.974284
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Steady state and high frequency transmittance of the potential barrier at the abrupt Np+-heterojunction is investigated. A general method of simulation based on the one-electron tunnelling and the time-dependent hamiltonian is presented. Numerical results are obtained for a model structure of the N-AlGaAs/p(+)-GaAs diode within the approximation of one and two energy quanta emission or absorption.
引用
收藏
页码：61 / 66
页数：6
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