InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

被引：13

作者：

Aksenov, M. S. ^{[1
,2
]}

Kokhanovskii, A. Yu. ^{[2
]}

Polovodov, P. A. ^{[2
]}

Devyatova, S. F. ^{[1
]}

Golyashov, V. A. ^{[1
,2
]}

Kozhukhov, A. S. ^{[1
,2
]}

Prosvirin, I. P. ^{[2
,3
]}

Khandarkhaeva, S. E. ^{[2
]}

Gutakovskii, A. K. ^{[1
,2
]}

Valisheva, N. A. ^{[1
]}

Tereshchenko, O. E. ^{[1
,2
]}

机构：

[1] RAS, Rzhanov Inst Semicond Phys, SB, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] RAS, Boreskov Inst Catalysis, SB, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 17期

关键词：

ELECTRONIC-PROPERTIES; SURFACE; BREAKDOWN;

D O I：

10.1063/1.4934745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed and applied a method of InAs passivation in the low-energy plasma of Townsend discharge. The controlled interface oxidation in the Ar:O-2:CF4 gas mixture under visualization of gas discharge plasma allowed growing thin homogeneous films in the range of 5-15 nm thickness. Oxidation with the addition of CF4 in gas-discharge plasma led to the formation of In and As oxyfluorides with a wide insulating gap and isostructural interface with unpinned Fermi level behavior. The metal-oxide-semiconductor structure showed excellent capacitance-voltage characteristics: small frequency dispersion (<15 mV), density of interface states (D-it) in the gap below 5 x 10(10) eV(-1) cm(-2), and fixed charge (Q(fix)) below 5 x 10(11) cm(-2). (C) 2015 AIP Publishing LLC.

引用

页数：5

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