Resistive Switching Properties of HfO2-based ReRAM with Implanted Si/Al Ions

被引：15

作者：

Xie, Hongwei ^{[1
,3
]}

Wang, Ming ^{[1
]}

Kurunczi, Peter ^{[2
]}

Erokhin, Yuri ^{[2
]}

Liu, Qi ^{[1
]}

Lv, Hangbing ^{[1
]}

Li, Yingtao ^{[1
,3
]}

Long, Shibing ^{[1
]}

Liu, Su ^{[3
]}

Liu, Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China

[2] Varian Semicond Equipment Bussiness, Appl Mat Inc, Gloucester, MA 01930 USA

[3] Lanzhou Univ, Sch Phys Sci Inc, Lanzhou 730000, Peoples R China

来源：

ION IMPLANTATION TECHNOLOGY 2012 | 2012年 / 1496卷

关键词：

Resistive random access memory (RRAM); HfO2; ion implantation; Si; Al; FILMS;

D O I：

10.1063/1.4766481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of Si and Al ion implantation on the resistive switching properties of a HfO2-based resistive random access memory (RRAM) device are investigated. Testing results demonstrate that Si or Al implantation into HfO2 films results in reduced electroforming voltages and improves reproducibility of resistive switching over 1,000 cycles as measured by a DC voltage sweeping method. Furthermore, the Si or Al implantation into HfO2 resistive switching memory devices was found to improve device yields, reduce operating voltages and their variability, expand on/off resistance ratio (>10(3) for Al-doped, > 500 for Si-doped), and increase retention times (> 3 x 10(5) s at room temperature). Doping by Si or Al ion is suggested to improve the formation of conducting filaments in HfO2 matrix and thus improve the performances of the Pt/Ti/HfO2/Pt device.

引用

页码：26 / 29

页数：4

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