Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

被引：4

作者：

Chalker, Paul R. ^{[1
]}

Marshall, Paul A. ^{[1
]}

Romani, Simon ^{[1
]}

Rosseinsky, Matthew J. ^{[2
]}

Rushworth, Simon ^{[3
]}

Williams, Paul A. ^{[3
]}

Buckett, John ^{[4
]}

McSporran, Neil ^{[4
]}

Ridealgh, John ^{[4
]}

机构：

[1] Univ Liverpool, Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England

[2] Univ Liverpool, Dept Chem, Liverpool L69 7ZD, Merseyside, England

[3] SAFC Hitech, Wirral, Merseyside CH62 3QF, England

[4] Pilkington Technol Management Ltd, Ormskrik, Lancs L40 5UF, England

来源：

TRANSPARENT CONDUCTING OXIDES AND APPLICATIONS | 2011年 / 1315卷

关键词：

D O I：

10.1557/opl.2011.711

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350 degrees C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Omega/square was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm(2)/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

引用

页码：39 / 44

页数：6

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