Microcrystalline Silicon Thin Films and Triple-Junction Solar Cells

被引:0
|
作者
Ren, Huizhi [1 ]
Zhao, Ying [1 ]
Zhang, Xiaodan [1 ]
Ge, Hong [1 ]
Wang, Zongpan [1 ]
机构
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China
来源
关键词
VHF-PECVD; microcrystalline silicon thin films; triple-junction solar cells;
D O I
10.4028/www.scientific.net/AMR.468-471.1912
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
We report on microcrystalline silicon thin films and a-Si:H/a-SiGe:H/mu c-Si:H triple-junction p-i-n solar cells deposited on large-area glass substrate. Microcrystalline silicon (mu c-Si:H) bottom cells were deposited at a VHF-PECVD deposition system with 40.68MHz. It is necessary to develop the uniformity of mu c-Si:H thin films for large-area deposition of high-quality triple-junction solar cells. By optimizing the deposition parameters, mu c-Si:H thin films have been obtained with good thickness and very good crystalline volume fractions uniformity over the whole substrates area. The triple-junction module have been successful fabricated. The best module on 0.79 m(2) size substrates has an initial total-area efficiency of 8.35%.
引用
收藏
页码:1912 / 1915
页数:4
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