New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy

被引：56
|
作者：
Mano, T
Watanabe, K
Tsukamoto, S
Fujioka, H
Oshima, M
Koguchi, N
机构：
[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan
[2] Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[3] Sci Univ Tokyo, Dept Mat Sci & Technol, Chiba 2788510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 9AB期
关键词：
quantum dots; InGaAs; droplet epitaxy; photoluminescence; transmission electron microscope;
D O I：
10.1143/JJAP.38.L1009
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Quantum dot (QD) systems for InGaAs/GaAs without a wetting layer have been fabricated on GaAs (001) surfaces by a new self-organized growth method using droplet epitaxy with highly dense Ga droplets. Droplets of InGa alloy with highly dense Ga droplets have been formed by supplying 1) Ga, 2) In and 3) Ga molecular beams, sequentially. These highly dense Ga droplets have successfully prevented the two-dimensional growth of InGaAs during crystallization under As Bur supply. In the plan-view transmission electron microscope image, the InGaAs QDs with the density of 7 x 10(9) cm(-2) are observed. These QDs show a very sharp photoluminescence peak (full width half maximum (FWHM): 21.6 meV) at 946 nm.
引用
收藏
页码：L1009 / L1011
页数：3
相关论文
共 50 条
  • [21] Magnetoluminescence study of annealing effects on the electronic structure of self-organized InGaAs/GaAs quantum dots
    Goñi, AR
    Born, H
    Heitz, R
    Hoffmann, A
    Thomsen, C
    Heinrichsdorff, F
    Bimberg, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7A): : 3907 - 3914
  • [22] Magnetoluminescence studies of highly packed InGaAs self-organized quantum dots on GaAs(311)B
    Akahane, Kouichi
    Lan, Shen
    Kawamura, Takahiro
    Takamasu, Tadashi
    Kido, Giyuu
    Okada, Yoshitaka
    Kawabe, Mitsuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (3 A): : 1100 - 1101
  • [23] Magnetoluminescence studies of highly packed InGaAs self-organized quantum dots on GaAs(311)B
    Akahane, K
    Lan, S
    Kawamura, T
    Takamasu, T
    Kido, G
    Okada, Y
    Kawabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1100 - 1101
  • [24] Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs
    Marzin, J.-Y., 1600, American Inst of Physics, Woodbury, NY, United States (73):
  • [25] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS
    MARZIN, JY
    GERARD, JM
    IZRAEL, A
    BARRIER, D
    BASTARD, G
    PHYSICAL REVIEW LETTERS, 1994, 73 (05) : 716 - 719
  • [26] Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
    Chen, MC
    Lin, HH
    Shie, CW
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3061 - 3064
  • [27] SELF-ORGANIZED GROWTH OF STRAINED INGAAS QUANTUM DISKS
    NOTZEL, R
    TEMMYO, J
    TAMAMURA, T
    NATURE, 1994, 369 (6476) : 131 - 133
  • [28] Advanced self-organized epitaxy for GaAs quantum wire arrays
    Miyao, M
    Hiruma, K
    Haraguchi, K
    Katsuyama, T
    Nishino, T
    PHYSICA B, 1996, 227 (1-4): : 287 - 290
  • [29] Array of the self-organized InGaAs quantum dots on GaAs (311)B substrates by atomic hydrogen-assisted molecular beam epitaxy
    Chun, YJ
    Nakajima, S
    Kawabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (8B): : L1075 - L1076
  • [30] Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
    Chen, Z. B.
    Lei, W.
    Chen, B.
    Wang, Y. B.
    Liao, X. Z.
    Tan, H. H.
    Zou, J.
    Ringer, S. P.
    Jagadish, C.
    SCRIPTA MATERIALIA, 2013, 69 (08) : 638 - 641
12345