Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon

被引：8

作者：

Albertazzi, E ^{[1
]}

Bianconi, M ^{[1
]}

Lulli, G ^{[1
]}

Nipoti, R ^{[1
]}

Carnera, A ^{[1
]}

Cellini, C ^{[1
]}

机构：

[1] UNIV PADUA,DIPARTIMENTO FIS G GALILEI,GNSM INFM,I-35131 PADUA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 112卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01429-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report a simple and efficient algorithm to calculate the growth of damage in Si within the framework of a recently developed Monte Carlo code for the simulation of ion implantation in crystals. We let the defects created by the incoming ions interact, during the simulation, with the damage previously accumulated. We assume this dynamical interaction to depend both on defect generation density and concentration of pre-existing damage. Preliminary comparison of calculations with experimental data in the case of Si samples implanted with 700 keV N+ ions shows that this scheme can well reproduce the observed non-linearities in the growth behavior.

引用

页码：152 / 155

页数：4

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