Single exciton magneto-photoluminescence in GaAs quantum wells

被引：0
|
作者：
Tischler, JG [1 ]
Gammon, D [1 ]
Bracker, AS [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 230卷 / 02期
关键词：
D O I：
10.1002/1521-3951(200204)230:2<315::AID-PSSB315>3.0.CO;2-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present the fine structure and Zeeman splitting of excitons localized in narrow GaAs quantum wells by interface roughness. We report an anomalous exciton identified by its intriguing magneto-optical characteristics as a function of field strength and orientation. In the Voigt geometry, the anomalous exciton g-factors are 5 to 10 times larger than those for a normal exciton in this quantum dot system.
引用
收藏
页码：315 / 320
页数：6
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