Properties of pulse electrodeposited copper gallium sulphide films

被引：2
|
作者：
Vadivel, S. [1 ]
Srinivasan, K. [2 ]
Murali, K. R. [3 ]
机构：
[1] C Abdul Hakeem Coll Engn & Technol, Dept Phys, Vellore, Tamil Nadu, India
[2] Govt Coll Engn, Dept Phys, Salem, India
[3] CSIR CECRI, ECMS Div, Karaikkudi, Tamil Nadu, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 07期
关键词：
SOLAR-CELLS; THIN;
D O I：
10.1007/s10854-013-1124-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper gallium sulphide films were deposited for the first time by the pulse electrodeposition technique at different duty cycles in the range of 6-50 % at room temperature and at a constant current density of 1.0 mA cm(-2). The films exhibited single phase copper gallium sulphide. The grain size increased from 30 to 70 nm with increase of duty cycle. Optical band gap of the films varied in the range of 2.30-2.36 eV. The resistivity increased from 0.10 to 1.70 ohm cm with increase of duty cycle from 6 to 50 %. Preliminary studies on solar cells with p-CuGaS2/n-CuInS2 junction yielded an efficiency of 4.14 %. This is the first report on solar cells using CuGaS2 with CuInS2.
引用
收藏
页码：2500 / 2505
页数：6
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