Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the maximum entropy principle

A hydrodynamical model for electron transport in silicon semiconductors, free of any fitting parameters, has been formulated in [1, 2] on the basis of the maximum entropy principle, by considering the energy band described by the Kane dispersion relation and by including electron-non polar optical phonon and electron-acoustic phonon scattering. In [3] the validity of this model has been checked in the bulk case. Here the consistence is investigated by comparing with Monte Carlo data the results of the simulation of a submicron n (+)- n - n (+)silicon diode for different length of the channel, bias voltage and doping profile. The results show that the model is sufficiently accurate for CAD purposes.