Electrical Characteristics of TiTaO Thin Films Deposited on SiO2/Si Substrates by Magnetron Sputtering

被引：3

作者：

Salimy, S. ^{[1
]}

Challali, F. ^{[1
,2
]}

Goullet, A. ^{[1
]}

Besland, M-P. ^{[1
]}

Carette, M. ^{[1
]}

Gautier, N. ^{[1
]}

Rhallabi, A. ^{[1
]}

Landesman, J. P. ^{[1
]}

Toutain, S. ^{[3
]}

Averty, D. ^{[3
]}

机构：

[1] Univ Nantes, Inst Mat Jean Rouxel IMN, CNRS, UMR 6502, F-44322 Nantes 3, France

[2] CNRS, LSPM, UPR3407, F-93430 Villetaneuse, France

[3] Univ Rennes 1, Inst Elect & Telecommun Rennes, F-35042 Nantes 3, France

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 03期

关键词：

GATE DIELECTRICS; INTERFACES;

D O I：

10.1149/2.006303ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical properties of metal-oxide-semiconductor capacitors based on TiTaO thin films deposited by reactive magnetron sputtering on silicon substrates are investigated. Electrical and optical parameters of TiTaO films have been extracted. The formation of a silicon dioxide interfacial layer during the first stage of the deposition process has been evidenced both by HRTEM observations and ellipsometric measurements. TiTaO MOS capacitors were characterized by C-V and I-V measurements: a high dielectric constant value of TiTaO thin film (kappa = 59) and leakage current of 5.10(-7) A/cm(2) at 2.5 V were obtained. Oxide charges within the TiTaO bulk were characterized as thickness dependent and vary with opposite sign as compare to the native silicon oxide interfacial layer. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.006303ssl] All rights reserved.

引用

页码：Q13 / Q15

页数：3

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