Performance enhancement of poly(3-hexylthiophene) organic field-effect transistor by inserting poly(methylmethacrylate) buffer layer

被引:29
|
作者
Shi, Wei [1 ]
Yu, Junsheng [1 ]
Huang, Wei [1 ]
Yu, Xinge [1 ]
Zheng, Yifan [1 ]
机构
[1] Univ Elect Sci & Technol China UESTC, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
美国国家科学基金会;
关键词
THIN-FILM TRANSISTORS; CONJUGATED POLYMERS; CIRCUITS; DIELECTRICS; MOBILITY; GROWTH;
D O I
10.1063/1.4798368
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrode buffer layer has been extensively studied to improve the performance of organic field-effect transistor (OFET). Here, poly(methylmethacrylate) (PMMA) was employed as an electrode buffer layer between poly(3-hexylthiophene) (P3HT) layer and gold electrodes in OFETs. These OFETs exhibited nearly five-fold enhancement of hole mobility. Through atomic force microscope and grazing-incidence X-ray diffraction analyses, the performance enhancement was attributed to the uniformity and hydrophobicity of PMMA surface, which led to a remarkable reduction of contact resistance at P3HT/electrode interface. This study provides a facile strategy for the performance enhancement of OFET and insights into the essentiality of buffer layers. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798368]
引用
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页数:4
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