Abrupt GaP/Si hetero-interface using bistepped Si buffer

被引：14

作者：

Wang, Y. Ping ^{[1
]}

Stodolna, J. ^{[2
]}

Bahri, M. ^{[3
]}

Kuyyalil, J. ^{[1
]}

Nguyen Thanh, T. ^{[1
]}

Almosni, S. ^{[1
]}

Bernard, R. ^{[1
]}

Tremblay, R. ^{[1
]}

Da Silva, M. ^{[1
]}

Letoublon, A. ^{[1
]}

Rohel, T. ^{[1
]}

Tavernier, K. ^{[1
]}

Largeau, L. ^{[3
]}

Patriarche, G. ^{[3
]}

Le Corre, A. ^{[1
]}

Ponchet, A. ^{[2
]}

Magen, C. ^{[4
,5
]}

Cornet, C. ^{[1
]}

Durand, O. ^{[1
]}

机构：

[1] INSA Rennes, CNRS, UMR FOTON, F-35708 Rennes, France

[2] Univ Toulouse, CEMES CNRS, F-31055 Toulouse 04, France

[3] CNRS UPR 20, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[4] Univ Zaragoza, LMA, INA ARAID, Zaragoza 50018, Spain

[5] Univ Zaragoza, Dept Fis Mat Condensada, Zaragoza 50018, Spain

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 19期

关键词：

MOLECULAR-BEAM EPITAXY; ANTIPHASE BOUNDARIES; UHV-CVD; SILICON; GROWTH; EVOLUTION; SURFACES; DEFECTS; HETEROEPITAXY; DIFFRACTION;

D O I：

10.1063/1.4935494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 50 条

[31] TEM CHARACTERIZATION OF THE GAP/SI INTERFACE GROWN BY MOCVD
SOGA, T
JIANG, ZK
SUZUKI, T
JIMBO, T
UMENO, M
APPLIED SURFACE SCIENCE, 1992, 60-1 : 380 - 384
[32] Interface and Surface Dielectric Anisotropies of GaP/Si(100)
Supplie, O.
Hannappel, T.
Pristovsek, M.
Doescher, H.
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013, : 137 - +
[33] Hetero-epitaxy of SrTiO3 on Si and control of the interface
Delhaye, G.
El Kazzi, M.
Gendry, M.
Hollinger, G.
Robach, Y.
THIN SOLID FILMS, 2007, 515 (16) : 6332 - 6336
[34] Direct measurements of trap density in a SiGe/Si hetero-interface and correlation between the trap density and low-frequency noise in SiGe-channel pMOSFETs
Tsuchiya, T
Imada, Y
Murota, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) : 2507 - 2512
[35] Growth of Ag(111) on Si(111) with nearly flat band and abrupt interface
Bocirnea, Amelia E.
Costescu, Ruxandra M.
Apostol, Nicoleta G.
Teodorescu, Cristian M.
APPLIED SURFACE SCIENCE, 2019, 473 : 433 - 441
[36] Hetero-interface-trap generation due to hot carriers in SiGe/Si-hetero-MOSFETs
Interdisciplinary Faculty of Science and Eng., Shimane Univ., 1060 Nishikawatsu, Matsue 690-8504, Japan
不详
不详
不详
IEEJ Trans. Electron. Inf. Syst., 2006, 9 (6+1101-1106):
[37] INTRINSIC INTERFACE STATES AS EXTENDED DEEP TRAPS - GE/GAP AND SI/GAP
BUISSON, JP
KYKTA, MP
DOW, JD
BERES, RP
ALLEN, RE
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4221 - 4222
[38] Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers
Freedsman, Joseph J.
Kubo, Toshiharu
Egawa, Takashi
APPLIED PHYSICS LETTERS, 2012, 101 (01)
[39] Valence-band offset at the Si/GaP (110) interface
Lazzouni, ME
Peressi, M
Baldereschi, A
APPLIED PHYSICS LETTERS, 1996, 68 (01) : 75 - 77
[40] Impact of interface on the effective band gap of Si quantum dots
Koenig, D.
Rudd, J.
Green, M. A.
Conibeer, G.
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (6-7) : 753 - 758

← 1 2 3 4 5 →