Simulation of Self-heating Effects on Heterojunction Bipolar Transistors

被引：0
|
作者：
Chang, Yang-Hua [1 ]
Cai, Jia-Shiou [1 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, 123 Univ Rd,Sec 3, Touliu 64002, Yunlin, Taiwan
来源：
IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS 2013 (ISNE 2013) | 2013年
关键词：
POWER DENSITIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-heating effect in heterojunction bipolar transistors has been studied by using a finite element analysis software which allows for the consideration of device thickness and the boundary condition of convection. Compared to the conventional thermal-electro model, which neglects the device thickness and assumes the adiabatic boundary condition, the finite element analysis provides more accurate results, especially under high-power operations.
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页数：3
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