New Analytical Model for Nanoscale Tri-Gate SOI MOSFETs Including Quantum Effects

被引：16
|
作者：
Vimala, P. [1 ]
Balamurugan, N. B. [1 ]
机构：
[1] Thiagarajar Coll Engn, Dept Elect & Commun Engn, Madurai 625005, Tamil Nadu, India
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2014年 / 2卷 / 01期
关键词：
Device modeling; energy quantization; inversion charge; Poisson-Schrodinger equation; tri-gate MOSFET; THRESHOLD VOLTAGE; COMPACT MODEL; DEVICE; CHARGE;
D O I：
10.1109/JEDS.2014.2298915
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an analytical model for tri-Gate (TG) MOSFETs considering quantum effects is presented. The proposed model is based on the analytical solution of Schrodinger-Poisson's equation using variational approach. An analytical expression of the inversion charge distribution function (ICDF) or wave function for the TG MOSFETs has been developed. This obtained ICDF is used to calculate the device parameters, such as the inversion charge centroid, threshold voltage, inversion charge, gate capacitance, and drain current. These parameters are modeled for various device dimensions and applied bias. The results are validated against the TCAD simulation results.
引用
收藏
页码：1 / 7
页数：7
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