Nano-patterning with Block Copolymers

被引:9
|
作者
La Fata, Pietro [1 ,2 ]
Puglisi, Rosaria [1 ]
Lombardo, Salvatore [1 ]
Bongiorno, Corrado [1 ]
机构
[1] Ist Microelettron & Microsistemi, CNR, I-95121 Catania, Italy
[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
关键词
Patterning; Polymers; ICP; Lithography;
D O I
10.1016/j.spmi.2007.12.017
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work we use di-block copolymers self-assembling to make templates for the fabrication of well ordered nano-patterned materials. By using Poly (styrene-b-methylmethacrylate) we obtain a close-packed hexagonal configuration of circular pores, with a tuneable length scale of 10-100 nm. Optimal conditions for long-range order of the template are obtained by varying the synthesis parameters. The self-assembled template is then transferred into different substrates to produce different nano-porous materials. We finally discuss the application of this technique to phase change random access memories, showing that, using di-block copolymer templates as etching mask, nano-pattemed SiO2 can be used to form ultra dense amorphous bits arrays in crystalline Ge2Sb2Te5 (GST) films. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:693 / 698
页数:6
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