Modeling and simulation of charge collection properties for 3D-trench electrode detector

被引：19
|
作者：
Ding, Hao [1 ,2 ]
Chen, Jianwei [1 ,2 ]
Li, Zheng [1 ,2 ,3 ]
Yan, Shaoan [1 ,2 ]
机构：
[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China
[2] Xiangtan Univ, Ctr Semicond Particle & Photon Imaging Detector D, Xiangtan 411105, Peoples R China
[3] Brookhaven Natl Lab, Upton, NY 11973 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2015年 / 796卷
关键词：
3D-trench electrode detectors; Device simulation; Induced current; Charge collection property; SILICON DETECTORS; COLUMNAR ELECTRODES; RADIATION HARDNESS; 3D DETECTORS; DOPING TYPE; NEUTRON; FABRICATION; DAMAGE;
D O I：
10.1016/j.nima.2015.04.065
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
3D-trench electrode detectors were simulated in this paper. Charge collection of 3D-trench electrode detector was simulated using the full 3D device simulation. The induced current and collected charge caused by drifting carriers, generated by a minimum ionizing particle (MIP) incident through the detector, have been modeled and calculated. The results indicate that the total collected charge in irradiated detector change with particle incident position and radiation fluence. In addition, we have estimated the average total collected charge generated by a MIP incident in 3D-trench electrode detector. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：29 / 33
页数：5
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