Al Concentration Effect on ZnO Based Thin Films for Photovoltaic Applications

被引：15

作者：

Ghomrani, F. Z. ^{[2
]}

Aissat, A. ^{[1
]}

Arbouz, H. ^{[1
]}

Benkouider, A. ^{[3
]}

机构：

[1] Univ Blida 1, LATSI Lab, Blida 09000, Algeria

[2] Univ Djilali Bounaama Khemis Miliana, Khemis Miliana, Algeria

[3] Aix Marseille Univ, IM2NP, CNRS, UMR 7334, F-13397 Marseille 20, France

来源：

INTERNATIONAL CONFERENCE ON TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY -TMREES15 | 2015年 / 74卷

关键词：

thin films; band gap; semiconductor; photovoltaic; ELECTRICAL-PROPERTIES; ZINC-OXIDE;

D O I：

10.1016/j.egypro.2015.07.733

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we prepared aluminum-doped (Al) zinc oxide (ZnO) thin films using the sol-gel method, glass substrates have been used with zinc acetate as cations source and 2-methoxiethanol as solvent. The obtained experimental results show that the ZnO deposited films are relatively uniform. Optical measurements demonstrate that the deposited ZnO layers have a band gap of 3.26eV which is close to that of the monocrystalline ZnO, about 3.3eV. It was found that the roughness decreases by increasing the dopants concentration. Whatever the used substrate, transmission was observed between 75% and 99% for films deposited on ZnO: Al. Robust solar cells can be performed using from this study. (C) 2015 The Authors. Published by Elsevier Ltd.

引用

页码：491 / 498

页数：8

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