Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L

被引：6
|
作者：
Hamadou, L.
Kadri, A.
Boughrara, D.
Benbrahim, N.
Petit, J. -P.
机构：
[1] Univ Mouloud Mammeri Tizi Ouzou, Lab Mat Electrochim & Corros, Harbin 150006, Peoples R China
[2] Univ Grenoble, Lab Electrochim & Physicochim Mat & Interfaces, UMR 5631, Grenoble, France
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 12期
关键词：
304L stainless steel; photocurrent; oxide films;
D O I：
10.1016/j.apsusc.2005.06.036
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The oxide films formed on AISI 304L stainless steel at 300 degrees C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the serniconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E-g2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E-G1 approximate to 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：4209 / 4217
页数：9
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