Structural phase progression in photo-excited VO2

被引:0
|
作者
Zhu, Yi [1 ]
Cai, Zhonghou [1 ]
Chen, Pice [2 ]
Zhang, Qingteng [2 ]
Highland, Matthew J. [3 ]
Jung, Il Woong [4 ]
Walko, Donald A. [1 ]
Dufresne, Eric M. [1 ]
Jeong, Jaewoo [5 ]
Samant, Mahesh G. [5 ]
Parkins, Stuart S. P. [5 ,6 ]
Freeland, John W. [1 ]
Evans, Paul G. [2 ]
Wen, Haidan [1 ]
机构
[1] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[3] Argonne Natl Lab, Div Sci Mat, Argonne, IL 60439 USA
[4] Argonne Natl Lab, Ctr Nanoscate Mat, Argonne, IL 60439 USA
[5] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
[6] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
关键词
METAL-INSULATOR TRANSITIONS; ELECTRON-DIFFRACTION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We reveal inhomogeneous structural phase transformation in photo-excited VO2 thin films by time-resolved x-ray diffraction microscopy. The in-plane plane phase progression is a result of displacive lattice transformation rather than driven by thermal transport.
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页数:2
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