INFLUENCE OF EVAPORATION CONDITIONS ON Mg/Si(111) INTERFACE FORMATION

被引：0

作者：

Galkin, K. N. ^{[1
]}

Korobtsov, V. V. ^{[1
]}

Kumar, M. ^{[2
]}

Shivaprasad, S. M. ^{[2
]}

机构：

[1] RAS, Far Eastern Branch, Inst Automat & Control Proc, Opt & Electrophys Lab, Radio Str 5, Vladivostok 690041, Russia

[2] Natl Phys Lab, Surface Phys & Nanostruct Grp, New Delhi 110012, India

来源：

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES | 2007年

关键词：

D O I：

10.1142/9789812770950_0047

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

The influences of evaporation flux rate and substrate temperature on Mg/Si (111) interface formation have been studied. At the flux rate of about 0.08 nm/min and substrate temperatures of 100-140 degrees C only continuous films of magnesium silicide have been grown. But at the flux rate of about 0.5 nm/min and substrate temperatures of 100-150 degrees C the surface phase Mg2Si ((2/3)root 3x(2/3)root 3)-R30 degrees has been grown. The system has been probed by in situ surface sensitive techniques as AES, LEED and EELS.

引用

页码：215 / +

页数：2

共 50 条

[41] Multilayer Si( 111)/Mg2Si clusters/Si heterostructures: Formation, optical and thermoelectric properties
Galkin, Nickolay G.
Galkin, Konstantin N.
Vavanova, Svetlana V.
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 : 12 - 20
[42] Influence of the preparation conditions on the morphology of perylene thin films on Si(111) and Si(100)
Casu, M. B.
Yu, X.
Schmitt, S.
Heske, C.
Umbach, E.
JOURNAL OF CHEMICAL PHYSICS, 2008, 129 (24):
[43] The Y-Si(111) interface formation studied by scanning tunneling microscopy
Polop, C
Sacedón, JL
Martín-Gago, JA
SURFACE SCIENCE, 2000, 454 : 842 - 846
[44] THERMAL EVOLUTION OF THE GD/SI(111) INTERFACE - FORMATION OF EPITAXIAL GD SILICIDE
HENLE, WA
RAMSEY, MG
NETZER, FP
CIMINO, R
BRAUN, W
SOLID STATE COMMUNICATIONS, 1989, 71 (08) : 657 - 660
[45] INITIAL-STAGE OF COSI2/SI(111) INTERFACE FORMATION
HASHIMOTO, S
LUO, L
THYGESEN, K
GIBSON, WM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C544 - C544
[46] INTERFACE FORMATION OF W EVAPORATED ON SI(111) (7X7)
AZIZAN, M
TAN, TAN
CINTI, R
BAPTIST, R
CHAUVET, G
SURFACE SCIENCE, 1986, 178 (1-3) : 17 - 26
[47] Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate
Hattori, Azusa N.
Hattori, Ken
Kodama, Kenji
Hosoito, Nobuyoshi
Daimon, Hiroshi
APPLIED PHYSICS LETTERS, 2007, 91 (20)
[48] THE FORMATION OF THE PB/SI(111) INTERFACE STUDIED BY INSITU ELLIPSOMETRY AND SURFACE SPECTROSCOPY
QUENTEL, G
GAUCH, M
DEGIOVANNI, A
YANG, WS
PERETTI, J
HANBUCKEN, M
LELAY, G
PHYSICA SCRIPTA, 1988, 38 (02): : 169 - 171
[49] ROOM-TEMPERATURE FORMATION AND OXIDATION PROPERTIES OF THE CR/SI(111) INTERFACE
WETZEL, P
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
GEWINNER, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (06): : 3359 - 3365
[50] Influence of sulfur interlayers on the Mg/CaAs(100) interface formation
Hohenecker, S
Kampen, TU
Zahn, DRT
Braun, W
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 2317 - 2323

← 1 2 3 4 5 →