Time-gated CMOS SPAD and a Quantum Well Laser Diode with a CMOS Driver for Time-Resolved Diffuse Optics Imaging

被引：0
|
作者：
Nissinen, J. [1 ]
Nissinen, I. [1 ]
Jahromi, S. [1 ]
Talala, T. [1 ]
Kostamovaara, J. [1 ]
机构：
[1] Univ Oulu, Circuits & Syst Res Unit, Oulu, Finland
来源：
2018 IEEE NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS): NORCHIP AND INTERNATIONAL SYMPOSIUM OF SYSTEM-ON-CHIP (SOC) | 2018年
基金：
芬兰科学院;
关键词：
Impulse response function; Time-resolved diffuse optics; Single-photon avalanche diode; GENERATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single-Photon Avalanche Photodiodes (SPADs) were fabricated and characterized in 150 nm CMOS technology. The SPAD is based on a p+/nwell junction with a p-substrate guard ring. In addition, a compact gain switched quantum well (QW) laser diode with a CMOS driver was used with the proposed SPAD for time-resolved diffuse optics measurements. The measured impulse response function (IRF) of the SPADs was similar to 50 ps at best. Two phantoms were measured to demonstrate the suitability of SPADs for time-resolved diffuse optics imaging (TRDOI).
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页数：4
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