Microstructure and defects of wurtzite structure thin films

被引：8

作者：

Sagalowicz, L ^{[1
]}

Fox, GR ^{[1
]}

Dubois, MA ^{[1
]}

Muller, CAP ^{[1
]}

Muralt, P ^{[1
]}

Setter, N ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Dept Mat, Lab Ceram, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1999年 / 19卷 / 6-7期

关键词：

ZnO; defects; electron microscopy; films;

D O I：

10.1016/S0955-2219(98)00453-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO and AlN, which exhibit the wurtzite structure, were deposited onto metal coated SiO2 substrates by sputtering. X-ray diffraction (XRD) indicated that the films contained no second phases and exhibited an [0001] texture. Transmission electron microscopy (TEM) observations confirmed the XRD results and revealed the columnar microstructure of the films. The width of the columnar grains were less than 30 nm for AIN and between 100 and 400 nm for ZnO. In the ZnO grains, a large concentration of defects were identified, which included dislocations and stacking faults that lie on the basal plane. (C) 1999 Elsevier Science Limited. All rights reserved.

引用

页码：1427 / 1430

页数：4

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