Total dose effects of 28nm FD-SOI CMOS transistors

被引：0
|
作者：
Kuang, Yong [1 ,2 ]
Bu, Jianhui [1 ,2 ]
Li, Bo [1 ,2 ]
Gao, Linchun [1 ,2 ]
Liang, Chunping [1 ,2 ]
Han, Zhengsheng [1 ,2 ,3 ]
Luo, Jiajun [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年
关键词：
Total ionizing dose effect; FDSOI; high-kappa gate oxide; BIAS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Planar FDSOI technology provides a solution for the scaling trend, as it enables ultra-low-power, ultra-high-speed performance for devices below the 28nm process node. In this paper, the total ionizing dose effect of 28nm FDSOI MOSFETs has been evaluated. The trapped electrons in the high-kappa gate oxide influenced the device performance greatly and the device performance could be recovered by biasing the body terminals.
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页数：3
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