Thermal instability of electron traps in InAs/GaAs quantum dot structures

被引：1

作者：

Kaniewska, M. ^{[1
]}

Engstrom, O. ^{[2
]}

Kaczmarczyk, M. ^{[1
]}

Zaremba, G. ^{[1
]}

机构：

[1] Inst Electr Mat Technol, Dept Anal Semicond Nanostruct, PL-02668 Warsaw, Poland

[2] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / Suppl 1期

关键词：

D O I：

10.1007/s10854-008-9703-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator.

引用

页码：S101 / S106

页数：6

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