The Effect of Oxygen Flow Rates on the Electrical Resistivity of MgO Thin Films in AC-PDPs

被引：0
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作者：
Chou, Hong-Chieh [1 ]
Kim, Sung-O [1 ]
Chen, Kuang-Lang
Chen, Samuel
Lee, Chien-Pang
Hsu, Chien-Hsing
Chou, Kuo-Ching
Huang, Chih-Ming
机构：
[1] Natl Chiao Tung Univ, Lab Nanosyst & Plasma, Dept Photon, Hsinchu 300, Taiwan
来源：
IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | 2006年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Magnesium oxide thin films were deposited with different thickness and oxygen flow rates for investigation the effects of the electrical resistivity of MgO thin films in AC-PDPs. The surface roughness was characterized by AFM. It reveals that higher oxygen flow rate generates higher electrical resistivity of MgO thin films.
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页码：383 / 386
页数：4
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