An improved SPICE model for high-frequency noise of BJT's and HBT's

被引：5
|
作者：
Zillmann, U
Herzel, F
机构：
[1] Institute for Semiconductor Physics
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1996年 / 31卷 / 09期
关键词：
D O I：
10.1109/4.535422
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved compact model for the high-frequency noise of bipolar junction transistors (BJT's) and heterojunction bipolar transistors (HBT's) is presented and implemented in SPICES. It properly takes into account the frequency function of thermal noise in the input circuit, which is related to the real part of the input admittance, This quantity is the result of an interplay between the base resistance, the internal emitter-base capacitance, the small-signal input conductance of the intrinsic transistor, and the emitter series resistance, This requires the replacement of the noisy base resistance in SPICE by a frequency-dependent expression consisting of the appropriate SPICE parameters. A similar substitution is needed in the output circuit. For a Si/SiGe HBT these improvements lead to excellent agreement between the noise figure and device simulation results.
引用
收藏
页码：1344 / 1346
页数：3
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