Correlation between the hysteresis and the initial defect density of graphene

被引：11

作者：

Cho, Chunhum ^{[1
]}

Lee, Young Gon ^{[2
]}

Jung, Ukjin ^{[2
]}

Kang, Chang Goo ^{[2
]}

Lim, Sungkwan ^{[1
]}

Hwang, Hyeon Jun ^{[2
]}

Choi, Hojun ^{[2
]}

Lee, Byoung Hun ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期

关键词：

RAMAN-SPECTROSCOPY; SIO2; TRANSISTORS; MECHANISM;

D O I：

10.1063/1.4818770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of the initial defects of graphene characterized by Raman spectroscopy is correlated with the physical mechanisms causing the hysteretic device characteristics of graphene field effect transistors (FETs). Fast charging related to the tunneling-induced charge exchange is found to be closely correlated with the initial defect density, while slow charging related to environmental influences such as the water redox reaction showed a weak correlation. It can be concluded that the intrinsic quality of graphene should be improved to minimize the hysteresis of graphene FETs even in an air-tight environment. (C) 2013 AIP Publishing LLC.

引用

页数：4

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