Electrical characterization of silicon dioxide thin film prepared by ArF excimer laser chemical vapor deposition from silicon tetraacetate

被引：3

作者：

Maruyama, A ^{[1
]}

Nakata, K ^{[1
]}

Yukimura, K ^{[1
]}

Yoshikado, S ^{[1
]}

Maruyama, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT CHEM ENGN,SAKYO KU,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 2A期

关键词：

silicon dioxide; silicon tetraacetate; ArF excimer laser; chemical vapor deposition; relative dielectric constant; dielectric tangent; capacitance-voltage curve;

D O I：

10.1143/JJAP.36.L150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon dioxide thin films were prepared by low-pressure direct photochemical vapor deposition (CVD) using an ArF excimer laser. A comparison of the relative dielectric constant and dielectric tangent indicated that laser-CVD was effective in lowering the substrate temperature from 200-300 degrees C to room temperature. Moreover, the capacitance-voltage curves of metal-oxide-semiconductor structure exhibited no significant hysteresis, indicating that the laser-CVD-prepared SiO2 films contained a lower concentration of mobile-ion charges compared to the films prepared by thermal decomposition of silicon tetraacetate without laser irradiation.

引用

页码：L150 / L153

页数：4

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