Use of tetraethylgermane in ArF excimer laser chemical vapor deposition of amorphous silicon-germanium films

被引：0
|
作者：
Ishihara, Fujio [1 ]
Uji, Hiroshi [1 ]
Kamimura, Tatsuya [1 ]
Matsumoto, Satoru [1 ]
Higuchi, Hirofumi [1 ]
Chichibu, Shigefusa [1 ]
机构：
[1] Keio Univ, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 5 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2229 / 2234
相关论文
共 50 条
  • [1] USE OF TETRAETHYLGERMANE IN ARF EXCIMER-LASER CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS SILICON-GERMANIUM FILMS
    ISHIHARA, F
    UJI, H
    KAMIMURA, T
    MATSUMOTO, S
    HIGUCHI, H
    CHICHIBU, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (5A): : 2229 - 2234
  • [2] Crystallization of amorphous silicon-germanium films deposited by low pressure chemical vapor deposition
    Guillet, D
    Sarret, M
    Haji, L
    Rogel, R
    Bonnaud, O
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 689 - 693
  • [3] Chemical vapor deposition of silicon-germanium heterostructures
    Bozzo, S
    Lazzari, JL
    Coudreau, C
    Ronda, A
    d'Avitaya, FA
    Derrien, J
    Mesters, S
    Hollaender, B
    Gergaud, P
    Thomas, O
    JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) : 171 - 184
  • [4] Silicon dioxide thin films prepared by ArF excimer laser chemical vapor deposition from silicon tetraacetate
    Tanaka, N
    Maruyama, A
    Yukimura, K
    Yoshikado, S
    Maruyama, T
    MATERIALS CHEMISTRY AND PHYSICS, 1998, 54 (1-3) : 197 - 200
  • [5] Silicon dioxide thin films prepared by ArF excimer laser chemical vapor deposition from silicon tetraacetate
    Doshisha Univ, Kyoto, Japan
    Mater Chem Phys, 1-3 (197-200):
  • [6] Silicon dioxide thin films prepared from silicon tetraacetate using ArF excimer laser by chemical vapor deposition
    Maruyama, Atsushi
    Tanaka, Naoki
    Nakata, Kazuhiro
    Yukimura, Ken
    Yoshikado, Shinzo
    Maruyama, Toshiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (9 A): : 4938 - 4942
  • [7] Silicon dioxide thin films prepared from silicon tetraacetate using ArF excimer laser by chemical vapor deposition
    Maruyama, A
    Tanaka, N
    Nakata, K
    Yukimura, K
    Yoshikado, S
    Maruyama, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9A): : 4938 - 4942
  • [8] DEPOSITION OF TANTALUM OXIDE-FILMS BY ARF EXCIMER LASER CHEMICAL VAPOR-DEPOSITION
    NISHIMURA, Y
    TOKUNAGA, K
    TSUJI, M
    THIN SOLID FILMS, 1993, 226 (01) : 144 - 148
  • [9] Selective deposition of silicon and silicon-germanium alloys by rapid thermal chemical vapor deposition
    Grant, JM
    Ang, M
    Allen, LR
    RAPID THERMAL AND INTEGRATED PROCESSING V, 1996, 429 : 349 - 354
  • [10] ArF-excimer laser induced chemical vapour deposition of amorphous hydrogenated SiGeC films
    López, E
    Chiussi, S
    Serra, C
    Serra, J
    González, P
    León, B
    Pérez-Amor, M
    APPLIED SURFACE SCIENCE, 2003, 208 : 682 - 687
12345