Use of tetraethylgermane in ArF excimer laser chemical vapor deposition of amorphous silicon-germanium films

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作者：
Ishihara, Fujio [1 ]
Uji, Hiroshi [1 ]
Kamimura, Tatsuya [1 ]
Matsumoto, Satoru [1 ]
Higuchi, Hirofumi [1 ]
Chichibu, Shigefusa [1 ]
机构：
[1] Keio Univ, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 5 A期
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页码：2229 / 2234
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