PSPICE analysis of a scanning capacitance microscope sensor

被引：4
|
作者：
Buh, GH [1 ]
Tran, C
Kopanski, JJ
机构：
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词：
D O I：
10.1116/1.1631290
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tuning curve are described. It is found that stray capacitances of the magnitude encountered in a conventional SCM measurement configuration are large enough to significantly decrease measurement sensitivity and sensor high-frequency voltage across the tip sample. We have also calculated and measured the delocalized dC/dV caused by stray capacitance, revealing that this background dC/dV must be accounted for in order to obtain the true localized dC/dV. (C) 2004 American Vacuum Society.
引用
收藏
页码：417 / 421
页数：5
相关论文
共 50 条
  • [21] Calibrated nanoscale capacitance measurements using a scanning microwave microscope
    Huber, H. P.
    Moertelmaier, M.
    Wallis, T. M.
    Chiang, C. J.
    Hochleitner, M.
    Imtiaz, A.
    Oh, Y. J.
    Schilcher, K.
    Dieudonne, M.
    Smoliner, J.
    Hinterdorfer, P.
    Rosner, S. J.
    Tanbakuchi, H.
    Kabos, P.
    Kienberger, F.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2010, 81 (11):
  • [22] A SCANNING TUNNELING MICROSCOPE WITH A CAPACITANCE-BASED POSITION MONITOR
    GRIFFITH, JE
    MILLER, GL
    GREEN, CA
    GRIGG, DA
    RUSSELL, PE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 2023 - 2027
  • [23] Multifunction scanning probe microscope with needle sensor
    Wang, Xuefang
    Zhang, Honghai
    Wang, Sheng
    Xu, Long
    Huazhong Ligong Daxue Xuebao/Journal Huazhong (Central China) University of Science and Technology, 2000, 28 (05): : 1 - 3
  • [24] Quantitative ultra shallow dopant profile measurement by scanning capacitance microscope
    Kikuchi, Y
    Kubo, T
    Kase, M
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 2002, 38 (01): : 75 - 81
  • [25] Intermittent-contact scanning capacitance microscope for lithographic overlay measurement
    Kopanski, JJ
    Mayo, S
    APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2469 - 2471
  • [26] Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples
    Stephenson, R
    Verhulst, A
    De Wolf, P
    Caymax, M
    Vandervorst, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 405 - 408
  • [27] Quantitative capacitance measurements of MOS structures using a scanning probe microscope
    Ott, Michael
    Abt, Jason
    Sharma, Udit
    Keyes, Edward
    Hall, Trevor J.
    Schriemer, Henry
    2006 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-5, 2006, : 2173 - +
  • [28] A scanning force microscope combined with a scanning electron microscope for multidimensional data analysis
    Troyon, M
    Lei, HN
    Wang, ZH
    Shang, GY
    MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1997, 8 (06): : 393 - 402
  • [29] Characterization of SiO2/Si with a novel scanning capacitance microscope combined with an atomic force microscope
    Tomiye, H
    Kawami, H
    Yao, T
    APPLIED SURFACE SCIENCE, 1997, 117 : 166 - 170
  • [30] Zeptofarad (10-21 F) resolution capacitance sensor for scanning capacitance microscopy
    Tran, T
    Oliver, DR
    Thomson, DJ
    Bridges, GE
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2001, 72 (06): : 2618 - 2623
12345