Influence of deposition pressure on hydrogenated amorphous carbon films prepared by d.c.-pulse plasma chemical vapor deposition

被引:5
|
作者
Wang, Chengbing [1 ]
Shi, Jing [2 ]
Xia, Rongbin [1 ]
Geng, Zhongrong [2 ]
机构
[1] Lanzhou Jiaotong Univ, Natl Engn Res Ctr Technol & Equipment Green Coati, Lanzhou 730070, Peoples R China
[2] Lanzhou Jiaotong Univ, Sch Mechatron Engn, Lanzhou 730070, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词
fullerene-like hydrogenated carbon films; hardness; Raman; XPS; FTIR; THIN-FILMS; C-H; RAMAN-SPECTRA; SPECTROSCOPY; TRIBOLOGY; GROWTH;
D O I
10.1002/sia.5162
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hydrogenated amorphous carbon films (a-C : H) were prepared by d.c.-pulse plasma chemical vapor deposition using CH4 and H-2 gases. The microstructure and hardness of the resulting films were investigated at different deposition pressures (6, 8, 11, 15, and 20 Pa). The growth rate increased sharply from 3.2 to 10.3 nm/min with increasing the pressure from 6 to 20 Pa. According to Raman spectra, XPS, and Fourier transform infrared analysis, the films deposited at the pressure of 6 and 8 Pa have high sp(3) content and show typical diamond-like character. However, the microstructures and bond configuration of the films deposited at 11, 15, and 20 Pa have high sp(2) content and favored fullerene-like nanostructure. The hardness and sp(2) content were shown to reach their minimum values simultaneously at a deposition pressure of 8 Pa and then increased continuously. The film with fullerene-like nanostructure obtained at 20 Pa displays a high Raman I-D/I-G ratio (similar to 1.6), and low XPS C 1s binding energy (284.4 eV). The microstructural analysis indicates that the films are composed of a hard and locally dense fullerene-like network, i.e. a predominantly sp(2)-bonded material. The rigidity of the films is basically provided by a matrix of dispersed cross-linked sp(2) sites. Copyright (C) 2012 John Wiley & Sons, Ltd.
引用
收藏
页码:800 / 804
页数:5
相关论文
共 50 条
  • [41] Plasma enhanced chemical vapor deposition and characterization of hydrogenated amorphous SiC films on Si
    Wang, YH
    Lin, JY
    Feng, ZC
    Chua, SJ
    Alfred, CHH
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 325 - 328
  • [42] Photoluminescence of amorphous Si films prepared by atmospheric pressure chemical vapor deposition
    Liu, Yong
    Xiao, Ying
    Wo, Yinhua
    Song, Chenlu
    Han, Gaorong
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 2004, 24 (06): : 469 - 471
  • [43] Effects of carbon nanoparticle insertion on stress reduction in hydrogenated amorphous carbon films using plasma chemical vapor deposition
    Ono, Shinjiro
    Hwang, Sung-Hwa
    Okumura, Takamasa
    Yamashita, Naoto
    Kamataki, Kunihiro
    Kiyama, Haruki
    Itagaki, Naho
    Koga, Kazunori
    Shiratani, Masaharu
    DIAMOND AND RELATED MATERIALS, 2024, 150
  • [44] BORON INCORPORATION IN HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION
    FLINT, JH
    BRANZ, HM
    HARRIS, CJ
    HAGGERTY, JS
    ADLER, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1419 - 1422
  • [45] Effects of the growth conditions on the roughness of amorphous hydrogenated carbon films deposited by plasma enhanced chemical vapor deposition
    Capote, G.
    Prioli, R.
    Freire, F. L., Jr.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (06): : 2212 - 2216
  • [46] Fluorinated amorphous carbon films prepared by plasma enhanced chemical vapor deposition for solar cell applications
    Valentini, L
    Salerni, V
    Armentano, I
    Kenny, JM
    Lozzi, L
    Santucci, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (05): : 1784 - 1790
  • [47] Effect of Ge Incorporation on Hydrogenated Amorphous Silicon Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition
    Yan, Baojun
    Zhao, Lei
    Zhao, Bending
    Chen, Jingwei
    Diao, Hongwei
    Wang, Guanghong
    Wang, Wenjing
    ADVANCED MATERIALS DESIGN AND MECHANICS, 2012, 569 : 27 - 30
  • [48] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    KUHMAN, D
    GRAMMATICA, S
    JANSEN, F
    THIN SOLID FILMS, 1989, 177 : 253 - 262
  • [49] ON THE MICROSTRUCTURAL, OPTICAL, AND THERMAL-PROPERTIES OF HYDROGENATED AMORPHOUS-CARBON FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    CHOU, LH
    WANG, HW
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) : 4673 - 4680
  • [50] Fractal Carbon Films Prepared by Chemical Vapor Deposition
    Cheng, Jin
    Zou, Xiaoping
    Yang, Gangqiang
    Lue, Xueming
    Wei, Cuiliu
    Sun, Zhe
    Feng, Hongying
    Yang, Yuan
    MULTI-FUNCTIONAL MATERIALS AND STRUCTURES III, PTS 1 AND 2, 2010, 123-125 : 1239 - 1242