Black Phosphorus Mid-Infrared Light-Emitting Diodes Integrated with Silicon Photonic Waveguides

被引:49
|
作者
Chang, Tian-Yun [1 ]
Chen, Yueyang [2 ]
Luo, De-In [1 ]
Li, Jia-Xin [1 ]
Chen, Po-Liang [1 ]
Lee, Seokhyeong [2 ]
Fang, Zhuoran [2 ]
Li, Wei-Qing [1 ]
Zhang, Ya-Yun [1 ]
Li, Mo [2 ,3 ]
Majumdar, Arka [2 ,3 ]
Liu, Chang-Hua [1 ,4 ]
机构
[1] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 30013, Taiwan
[2] Univ Washington, Dept Elect & Comp Engn, Seattle, WA 98195 USA
[3] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
关键词
electroluminescence; van der Waals heterostructures; black phosphorus; mid-infrared; optoelectronics; silicon photonics; BAND;
D O I
10.1021/acs.nanolett.0c02818
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications in sensing, including environmental monitoring, defense, and medical diagnostics. Continued efforts are underway to realize on-chip sensors via heterogeneous integration of mid-IR emitters on a silicon photonic chip, but the uptake of such an approach is limited by the high costs and interfacial strains, associated with the processes of heterogeneous integrations. Here, the black phosphorus (BP)-based van der Waals (vdW) heterostructures are exploited as room-temperature LEDs. The demonstrated devices emit linearly polarized light, and the spectra cover the technologically important mid-IR atmospheric window. Additionally, the BP LEDs exhibit fast modulation speed and exceptional operation stability. The measured peak extrinsic quantum efficiency is comparable to the III-V/II-VI mid-IR LEDs. By leveraging the integrability of vdW heterostructures, we further demonstrate a silicon photonic waveguide-integrated BP LED.
引用
收藏
页码:6824 / 6830
页数:7
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