Influence of Fin Dimensions on Performance of Nanoscale Rectzoidal Bulk Fin Shaped Field Effect Transistor

FinFET, being a propitious 3D device at lower technology nodes has captured utmost importance in the processors of computing devices of various semiconductor manufacturing companies. Performance of FinFET is highly sensitive to variations in fin related dimensions like fin thickness and fin height, specifically their ratio with gate length (i.e., fin width/gate length; W-fin/L-g and fin height/gate length; H-fin/L-g) plays crucial role in determining the drain current, short channel effects and analog figures of merit. In this work, Rectzoidal FinFET has been designed from the union of existing rectangular and trapezoidal transistors using three dimensional Technology computer aided design tool. Extensive simulations have been carried out to investigate the dependence of FinFET performance on its fin parameters. On-current/off-current of order 10(6), subthreshold swing similar to 65 mV/dec and drain induced barrier lowering <50 mV/V intrinsic gain >100 dB is obtained for particular values of W-fin and H-fin . Moreover, proposed fin geometry occupies comparatively lesser area than existing transistor structures. In brief, this work aims to provide valuable insights on the novel geometry of FinFET and proves its applicability in nanoscale circuits.