Electrical characterisation of spin-coated a-IZO thin-film transistors

被引：0
|
作者：
Deam, L. [1 ,2 ]
Lee, K. K. [1 ]
McCallum, J. C. [1 ]
Singh, B. [2 ]
机构：
[1] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia
[2] CSIRO, Mat Sci & Engn, Flexible Elect, Clayton, Vic 3168, Australia
来源：
2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012) | 2012年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical measurements have been performed on amorphous metal oxide spin-coated thin-film transistors. The conducting layer is amorphous indium zinc oxide (a-IZO) which has been processed at low temperatures. We are looking to improve material and device properties, in particular carrier mobility, using electrical characterisation techniques such as deep-level transient spectroscopy (DLTS) and Hall measurements.
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页码：209 / +
页数：2
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