Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates

被引：19
|
作者：
Oliveira, Alberto [1 ]
Veloso, Anabela [2 ]
Claeys, Cor [3 ]
Horiguchi, Naoto [2 ]
Simoen, Eddy [2 ]
机构：
[1] Univ Tecnol Fed Parana UTFPR, Elect Engn Dept, BR-85902490 Toledo, Brazil
[2] IMEC, B-3001 Leuven, Belgium
[3] Katholieke Univ Leuven, Elect Engn Dept, B-3001 Leuven, Belgium
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 11期
关键词：
Carrier number fluctuations; Coulomb scattering; flicker noise; gate stack; gate-all-around (GAA); mobility; n-channel; oxide trap density; power spectral density (PSD); threshold voltage; 1/F NOISE; TRANSISTORS; PMOSFETS;
D O I：
10.1109/TED.2020.3024271
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents a comparative low-frequency noise (LFN) characterization of gate-all-around nanosheet n-channel Si metal-oxide-semiconductor field effect transistors, processedwith three differentmetal gates (MGs): an aluminum-based reference process and two alternative effective work function (EWF) stacks. In all cases, the gate dielectric is composed of HfO2 over an SiO2 interfacial layer. The LFN figures ofmerit are extracted, such as the oxide trap density and Coulomb scattering coefficient, and the correlations with the threshold voltage and the electron mobility are investigated. Carrier number fluctuations are confirmedas the dominantmechanismof the 1/f noise for all evaluated devices. Additionally, it is shown that the specific MG can contribute to the carrier scattering, degrading the electron mobility. The most promising results are obtained for one of the alternative MGs, exhibiting a low oxide trap density level, a low threshold voltage and insignificant mobility degradation.
引用
收藏
页码：4802 / 4807
页数：6
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